AON3408 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON3408  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 88 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: DFN3X3

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AON3408 datasheet

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 aon3408.pdf pdf_icon

AON3408

AON3408 30V N-Channel MOSFET General Description Product Summary Features The AON3408 uses advanced trench technology to VVDS (V) 30V (V) ==30V DS provide excellent RDS(ON) and low gate charge. This IDD 9.2A (VGS 10V) I ==11A (VGS ==10V) device is suitable for use as a load switch or in PWM RDS(ON)

 8.1. Size:418K  aosemi
 aon3406.pdf pdf_icon

AON3408

AON3406 30V N-Channel MOSFET General Description Features The AON3406 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 8.2. Size:106K  aosemi
 aon3402.pdf pdf_icon

AON3408

AON3402 20V N-Channel MOSFET General Description Product Summary The AON3402 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 12.6A (VGS = 4.5V) operation with gate voltages as low as 1.8V while RDS(ON)

 9.1. Size:310K  1
 aon3414.pdf pdf_icon

AON3408

AON3414 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AOT42S60L, AOT462, AOT4S60L, AOT7S60L, AOT7S65L, AOT9N40L, AON2880, AON3406, RFP50N06, AON3702, AON4407, AON4413, AON4420, AON4602, AON4701, AON5800, AON5802A