All MOSFET. AON3408 Datasheet

 

AON3408 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON3408
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 9.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: DFN3X3

 AON3408 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON3408 Datasheet (PDF)

 ..1. Size:109K  aosemi
 aon3408.pdf

AON3408 AON3408

AON340830V N-Channel MOSFETGeneral Description Product SummaryFeaturesThe AON3408 uses advanced trench technology to VVDS (V) 30V (V) ==30VDSprovide excellent RDS(ON) and low gate charge. ThisIDD 9.2A (VGS 10V)I ==11A (VGS ==10V)device is suitable for use as a load switch or in PWMRDS(ON)

 8.1. Size:418K  aosemi
 aon3406.pdf

AON3408 AON3408

AON340630V N-Channel MOSFETGeneral Description FeaturesThe AON3406 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

 8.2. Size:106K  aosemi
 aon3402.pdf

AON3408 AON3408

AON340220V N-Channel MOSFETGeneral Description Product SummaryThe AON3402 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 12.6A (VGS = 4.5V)operation with gate voltages as low as 1.8V whileRDS(ON)

 9.1. Size:310K  1
 aon3414.pdf

AON3408 AON3408

AON341430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

 9.2. Size:227K  aosemi
 aon3419.pdf

AON3408 AON3408

AON341930V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON3419 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -10Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.3. Size:310K  aosemi
 aon3414.pdf

AON3408 AON3408

AON341430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK694

 

 
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