AON4407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON4407
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.5 W
Tensión drenaje-fuente (Vds): 12 V
Tensión compuerta-fuente (Vgs): 8 V
Corriente continua de drenaje (Id): 9 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 0.85 V
Tiempo de elevación (tr): 580 nS
Conductancia de drenaje-sustrato (Cd): 334 pF
Resistencia drenaje-fuente RDS(on): 0.02 Ohm
Empaquetado / Estuche: DFN3X2
Búsqueda de reemplazo de MOSFET AON4407
AON4407 Datasheet (PDF)
1.1. aon4407.pdf 
Size:481K _aosemi
AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and operation ID = -9 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is suitable RDS(ON) < 20mΩ (VGS = -4.5V) for use as a load switch. RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Pro
5.1. aon4420l.pdf Size:147K _aosemi
AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON) < 19mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V)
5.2. aon4413.pdf Size:137K _aosemi
AON4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4413 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON) < 46mΩ (VGS = -10V) applications. Standard product AON4413 is Pb-free RDS(ON) < 60mΩ (VGS =
5.3. aon4420.pdf Size:148K _aosemi
AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON) < 19mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V)
5.4. aon4421.pdf Size:299K _aosemi
AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary VDS -30V The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch. RDS(ON) (at VGS=-10V) < 26mΩ RDS(ON) (at VGS=-4.5V) < 34mΩ ESD Protected -RoHS Compliant -Halogen Free
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
