AON4407 Todos los transistores

 

AON4407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON4407

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 0.85 V

Tiempo de elevación (tr): 580 nS

Conductancia de drenaje-sustrato (Cd): 334 pF

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Empaquetado / Estuche: DFN3X2

Búsqueda de reemplazo de MOSFET AON4407

 

AON4407 Datasheet (PDF)

1.1. aon4407.pdf Size:481K _aosemi

AON4407
AON4407

AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and operation ID = -9 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is suitable RDS(ON) < 20mΩ (VGS = -4.5V) for use as a load switch. RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Pro

5.1. aon4421.pdf Size:299K _aosemi

AON4407
AON4407

AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary VDS -30V The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch. RDS(ON) (at VGS=-10V) < 26mΩ RDS(ON) (at VGS=-4.5V) < 34mΩ ESD Protected -RoHS Compliant -Halogen Free

5.2. aon4420.pdf Size:148K _aosemi

AON4407
AON4407

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON) < 19mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V)

 5.3. aon4420l.pdf Size:147K _aosemi

AON4407
AON4407

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON) < 19mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V)

5.4. aon4413.pdf Size:137K _aosemi

AON4407
AON4407

AON4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4413 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON) < 46mΩ (VGS = -10V) applications. Standard product AON4413 is Pb-free RDS(ON) < 60mΩ (VGS =

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


AON4407
  AON4407
  AON4407
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: INK0310AP1 | INK0302AC1 | INK021AAP1 | INK0210AP1 | INK0210AC1 | INK0200AC1 | INK011BAP1 | INK0112AU1 | INK0112AM1 | INK0112AC1 | INK0103AU1 | INK0103AM1 | INK0103AC1 | INK0102AU1 | INK0102AM1 |

 

 

 
Back to Top