AON4407 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON4407  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 580 nS

Cossⓘ - Capacitancia de salida: 334 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: DFN3X2

  📄📄 Copiar 

 Búsqueda de reemplazo de AON4407 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AON4407 datasheet

 ..1. Size:481K  aosemi
 aon4407.pdf pdf_icon

AON4407

AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and operation ID = -9 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is suitable RDS(ON)

 9.1. Size:148K  aosemi
 aon4420.pdf pdf_icon

AON4407

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON)

 9.2. Size:299K  aosemi
 aon4421.pdf pdf_icon

AON4407

AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary VDS -30V The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch. RDS(ON) (at VGS=-10V)

 9.3. Size:147K  aosemi
 aon4420l.pdf pdf_icon

AON4407

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON)

MOSTRAR MÁS

Otros transistores... AOT4S60L, AOT7S60L, AOT7S65L, AOT9N40L, AON2880, AON3406, AON3408, AON3702, CS150N03A8, AON4413, AON4420, AON4602, AON4701, AON5800, AON5802A, AOT11S60L, AOT11S65L