AON4407 Todos los transistores

 

AON4407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON4407
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 580 nS
   Cossⓘ - Capacitancia de salida: 334 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: DFN3X2

 Búsqueda de reemplazo de MOSFET AON4407

 

AON4407 Datasheet (PDF)

 ..1. Size:481K  aosemi
aon4407.pdf

AON4407
AON4407

AON440712V P-Channel MOSFETGeneral Description FeaturesThe AON4407 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and operationID = -9 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is suitableRDS(ON)

 9.1. Size:148K  aosemi
aon4420.pdf

AON4407
AON4407

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

 9.2. Size:299K  aosemi
aon4421.pdf

AON4407
AON4407

AON4421P-Channel Enhancement Mode Field Effect Transistor General Description Product SummaryVDS -30VThe AON4421 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8Adevice is suitable for use as a load switch. RDS(ON) (at VGS=-10V)

 9.3. Size:147K  aosemi
aon4420l.pdf

AON4407
AON4407

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

 9.4. Size:137K  aosemi
aon4413.pdf

AON4407
AON4407

AON4413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4413 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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