AON4407 - описание и поиск аналогов

AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and operation ID = -9 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is suitable RDS(ON)

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON)

AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary VDS -30V The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch. RDS(ON) (at VGS=-10V)

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON)

AON4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4413 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON)