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AON4420 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON4420
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.2 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: DFN3X2

 Búsqueda de reemplazo de MOSFET AON4420

 

AON4420 Datasheet (PDF)

 ..1. Size:148K  aosemi
aon4420.pdf

AON4420
AON4420

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

 0.1. Size:147K  aosemi
aon4420l.pdf

AON4420
AON4420

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

 8.1. Size:299K  aosemi
aon4421.pdf

AON4420
AON4420

AON4421P-Channel Enhancement Mode Field Effect Transistor General Description Product SummaryVDS -30VThe AON4421 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8Adevice is suitable for use as a load switch. RDS(ON) (at VGS=-10V)

 9.1. Size:137K  aosemi
aon4413.pdf

AON4420
AON4420

AON4413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4413 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

 9.2. Size:481K  aosemi
aon4407.pdf

AON4420
AON4420

AON440712V P-Channel MOSFETGeneral Description FeaturesThe AON4407 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and operationID = -9 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is suitableRDS(ON)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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