AON4420 MOSFET Datasheet: N-Ch, 30V, 10A. Full specification with pinout and replacement list

AON4420 Specs and Replacement

Type Designator: AON4420

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN3X2

AON4420 substitution

- MOSFET ⓘ Cross-Reference Search

AON4420 datasheet

..1. Size:148K aosemi
aon4420.pdf pdf_icon

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON) ... See More ⇒

0.1. Size:147K aosemi
aon4420l.pdf pdf_icon

8.1. Size:299K aosemi
aon4421.pdf pdf_icon

AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary VDS -30V The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch. RDS(ON) (at VGS=-10V) ... See More ⇒

9.1. Size:137K aosemi
aon4413.pdf pdf_icon

AON4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4413 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒