AON4602 Todos los transistores

 

AON4602 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON4602

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.7 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 3.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: DFN3X2

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AON4602 Datasheet (PDF)

1.1. aon4602.pdf Size:147K _aosemi

AON4602
AON4602

AON4602 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The VDS (V) = 20V -20V complementary MOSFETs form a high-speed power ID = 4.2A -3.4A (VGS= ±4.5V) inverter, suitable for a multitude of applications. Standard Product AON4602

4.1. aon4605.pdf Size:419K _aosemi

AON4602
AON4602

AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to N-Channel P-Channel provide excellent RDS(ON) and low gate charge. The VDS= 30V -30V complementary MOSFETs form a high-speed power ID= 4.3A (VGS=10V) -3.4A (VGS=-10V) inverter, suitable for a multitude of applications. RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 110mΩ (V

 

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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