AON4602 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON4602
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.7 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 8 V
Corriente continua de drenaje (Id): 3.4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.09 Ohm
Empaquetado / Estuche: DFN3X2
Búsqueda de reemplazo de MOSFET AON4602
AON4602 Datasheet (PDF)
1.1. aon4602.pdf 
Size:147K _aosemi
AON4602 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The VDS (V) = 20V -20V complementary MOSFETs form a high-speed power ID = 4.2A -3.4A (VGS= ±4.5V) inverter, suitable for a multitude of applications. Standard Product AON4602
4.1. aon4605.pdf Size:419K _aosemi
AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to N-Channel P-Channel provide excellent RDS(ON) and low gate charge. The VDS= 30V -30V complementary MOSFETs form a high-speed power ID= 4.3A (VGS=10V) -3.4A (VGS=-10V) inverter, suitable for a multitude of applications. RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 110mΩ (V
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
