AON4602 PDF and Equivalents Search

 

AON4602 Specs and Replacement

Type Designator: AON4602

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: DFN3X2

AON4602 substitution

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AON4602 datasheet

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AON4602

AON4602 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The VDS (V) = 20V -20V complementary MOSFETs form a high-speed power ID = 4.2A -3.4A (VGS= 4.5V) inverter, suitable for a multitude of applications. Standard Product AON4602 ... See More ⇒

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AON4602

AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to N-Channel P-Channel provide excellent RDS(ON) and low gate charge. The VDS= 30V -30V complementary MOSFETs form a high-speed power ID= 4.3A (VGS=10V) -3.4A (VGS=-10V) inverter, suitable for a multitude of applications. RDS(ON) RDS(ON) ... See More ⇒

Detailed specifications: AOT9N40L, AON2880, AON3406, AON3408, AON3702, AON4407, AON4413, AON4420, STP80NF70, AON4701, AON5800, AON5802A, AOT11S60L, AOT11S65L, AOT15S60L, AOT15S65, AOT15S65L

Keywords - AON4602 MOSFET specs

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