All MOSFET. AON4602 Datasheet

 

AON4602 Datasheet and Replacement


   Type Designator: AON4602
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.2 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN3X2
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AON4602 Datasheet (PDF)

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AON4602

AON4602Complementary Enhancement Mode Field Effect TransistorGeneral Description Featuresn-channel p-channelThe AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The VDS (V) = 20V -20Vcomplementary MOSFETs form a high-speed power ID = 4.2A -3.4A (VGS= 4.5V)inverter, suitable for a multitude of applications. Standard Product AON4602

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AON4602

AON460530V Complementary MOSFETGeneral Description Product SummaryThe AON4605 uses advanced trench technology to N-Channel P-Channelprovide excellent RDS(ON) and low gate charge. TheVDS= 30V -30Vcomplementary MOSFETs form a high-speed power ID= 4.3A (VGS=10V) -3.4A (VGS=-10V)inverter, suitable for a multitude of applications. RDS(ON) RDS(ON)

Datasheet: AOT9N40L , AON2880 , AON3406 , AON3408 , AON3702 , AON4407 , AON4413 , AON4420 , AO3400 , AON4701 , AON5800 , AON5802A , AOT11S60L , AOT11S65L , AOT15S60L , AOT15S65 , AOT15S65L .

History: STD65NF06 | SI7117DN | SIHFP17N50L | BUK753R4-30B | AOD7N65 | CJL2013 | 11NM70G-TF1-T

Keywords - AON4602 MOSFET datasheet

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