All MOSFET. AON4602 Datasheet

 

AON4602 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON4602
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.2 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN3X2

 AON4602 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON4602 Datasheet (PDF)

 ..1. Size:147K  aosemi
 aon4602.pdf

AON4602 AON4602

AON4602Complementary Enhancement Mode Field Effect TransistorGeneral Description Featuresn-channel p-channelThe AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The VDS (V) = 20V -20Vcomplementary MOSFETs form a high-speed power ID = 4.2A -3.4A (VGS= 4.5V)inverter, suitable for a multitude of applications. Standard Product AON4602

 8.1. Size:419K  aosemi
 aon4605.pdf

AON4602 AON4602

AON460530V Complementary MOSFETGeneral Description Product SummaryThe AON4605 uses advanced trench technology to N-Channel P-Channelprovide excellent RDS(ON) and low gate charge. TheVDS= 30V -30Vcomplementary MOSFETs form a high-speed power ID= 4.3A (VGS=10V) -3.4A (VGS=-10V)inverter, suitable for a multitude of applications. RDS(ON) RDS(ON)

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History: DMN3030LSS

 

 
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