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AOT27S60L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT27S60L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO220
 

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AOT27S60L Datasheet (PDF)

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AOT27S60L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 6.1. Size:295K  aosemi
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AOT27S60L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 6.2. Size:376K  aosemi
 aot27s60 aob27s60 aotf27s60.pdf pdf_icon

AOT27S60L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 6.3. Size:245K  inchange semiconductor
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AOT27S60L

isc N-Channel MOSFET Transistor AOT27S60FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

MOSTRAR MÁS

Otros transistores... AOT15S65 , AOT15S65L , AOT20N25L , AOT20N60L , AOT20S60L , AOT22N50L , AOT25S65L , AOT270L , 2N60 , AON6906 , AON6908 , AON6912 , AON6932 , AON6934 , AON6974 , AON7202 , AON7422L .

History: SSM3K04FU | QM2702D | IPD80R450P7 | 2SK4067I | HGB021N08A | SM4303PSUC

 

 
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