AOT27S60L Specs and Replacement
Type Designator: AOT27S60L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO220
AOT27S60L substitution
- MOSFET ⓘ Cross-Reference Search
AOT27S60L datasheet
aot27s60l aob27s60l aotf27s60l aotf27s60.pdf
AOT27S60L/AOB27S60L/AOTF27S60L/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60L & AOB27S60L & AOTF27S60L & AOTF27S60 have been fabricated using the advanced IDM 110A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.16 levels of performance and robustness in switching Qg,typ 26nC applic... See More ⇒
aot27s60l.pdf
AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin... See More ⇒
aot27s60.pdf
AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin... See More ⇒
aot27s60 aob27s60 aotf27s60.pdf
AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin... See More ⇒
Detailed specifications: AOT15S65, AOT15S65L, AOT20N25L, AOT20N60L, AOT20S60L, AOT22N50L, AOT25S65L, AOT270L, 20N50, AON6906, AON6908, AON6912, AON6932, AON6934, AON6974, AON7202, AON7422L
Keywords - AOT27S60L MOSFET specs
AOT27S60L cross reference
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History: APM4476K | SMG2328
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