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AON6912 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6912
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 52 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0137 Ohm
   Paquete / Cubierta: DFN5X6AEP
 

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AON6912 Datasheet (PDF)

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AON6912

AON691230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 0.1. Size:545K  aosemi
 aon6912a.pdf pdf_icon

AON6912

AON6912A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912A is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V)

 8.1. Size:394K  aosemi
 aon6918.pdf pdf_icon

AON6912

AON691825V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6918 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

 8.2. Size:424K  aosemi
 aon6910a.pdf pdf_icon

AON6912

AON6910A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6910A is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V)37APower DFN5x6B package. The Q1 "High Side" MOSFET is

MOSTRAR MÁS

Otros transistores... AOT20N60L , AOT20S60L , AOT22N50L , AOT25S65L , AOT270L , AOT27S60L , AON6906 , AON6908 , IRF2807 , AON6932 , AON6934 , AON6974 , AON7202 , AON7422L , AON7514 , AON7702 , AON6200 .

History: KI2304DS | HSU80N03

 

 
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