AON6912 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6912
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 125 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0137 Ohm
Paquete / Cubierta: DFN5X6AEP
Búsqueda de reemplazo de AON6912 MOSFET
AON6912 Datasheet (PDF)
aon6912.pdf

AON691230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6912a.pdf

AON6912A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6912A is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 34A 52AMOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V)
aon6918.pdf

AON691825V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6918 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6910a.pdf

AON6910A30V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2The AON6910A is designed to provide a high efficiency Q1synchronous buck power stage with optimal layout and board VDS 30V 30Vspace utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V)37APower DFN5x6B package. The Q1 "High Side" MOSFET is
Otros transistores... AOT20N60L , AOT20S60L , AOT22N50L , AOT25S65L , AOT270L , AOT27S60L , AON6906 , AON6908 , IRF2807 , AON6932 , AON6934 , AON6974 , AON7202 , AON7422L , AON7514 , AON7702 , AON6200 .
History: BLP04N08-BA | IXTH30N50L | 2SJ602-S | FMR19N60ES | HM20P02D | PW5S6EA | 2SK3152
History: BLP04N08-BA | IXTH30N50L | 2SJ602-S | FMR19N60ES | HM20P02D | PW5S6EA | 2SK3152



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