AON6912. Аналоги и основные параметры
Наименование производителя: AON6912
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 52 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 125 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0137 Ohm
Тип корпуса: DFN5X6AEP
Аналог (замена) для AON6912
- подборⓘ MOSFET транзистора по параметрам
AON6912 даташит
aon6912.pdf
AON6912 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6912a.pdf
AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V)
aon6918.pdf
AON6918 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6910a.pdf
AON6910A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6910A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V) 37A Power DFN5x6B package. The Q1 "High Side" MOSFET is
Другие MOSFET... AOT20N60L , AOT20S60L , AOT22N50L , AOT25S65L , AOT270L , AOT27S60L , AON6906 , AON6908 , STF13NM60N , AON6932 , AON6934 , AON6974 , AON7202 , AON7422L , AON7514 , AON7702 , AON6200 .
History: IPD400N06N | APT10040B2VR
History: IPD400N06N | APT10040B2VR
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