AON6206 Todos los transistores

 

AON6206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6206

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 31 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.3 V

Tiempo de elevación (tr): 9.7 nS

Conductancia de drenaje-sustrato (Cd): 510 pF

Resistencia drenaje-fuente RDS(on): 0.0065 Ohm

Empaquetado / Estuche: DFN5X6EP

Búsqueda de reemplazo de MOSFET AON6206

 

AON6206 Datasheet (PDF)

1.1. aon6206.pdf Size:239K _aosemi

AON6206
AON6206

AON6206 30V N-Channel MOSFET General Description Product Summary VDS The AON6206 uses trench MOSFET technology that is 30V 24A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are < 6.5mΩ RDS(ON) (at VGS=10V) minimized due to an extremely low combination of RDS(ON) < 9mΩ RDS(ON) (at VGS = 4.5V) and Crss.In a

4.1. aon6200.pdf Size:311K _aosemi

AON6206
AON6206

AON6200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance. Conduction and RDS(ON) (at VGS=10V) < 7.8mΩ switching losses are minimized due to an extremely low RDS(ON) (at VGS = 4.5V) < 11mΩ combination of RD

4.2. aon6202.pdf Size:236K _aosemi

AON6206
AON6206

AON6202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 5.5mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 7.5mΩ RDS(ON) and Crss.In ad

 4.3. aon6204.pdf Size:257K _aosemi

AON6206
AON6206

AON6204 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 12mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 18mΩ RDS(ON) and Crss.In addi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 
Back to Top

 


AON6206
  AON6206
  AON6206
  AON6206
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top