AON6206
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6206
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 9.7
nS
Cossⓘ -
Output Capacitance: 510
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
DFN5X6
AON6206
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6206
Datasheet (PDF)
..1. Size:239K aosemi
aon6206.pdf
AON620630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6206 uses trench MOSFET technology that is 30V24Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are
8.1. Size:257K aosemi
aon6204.pdf
AON620430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6204 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
8.2. Size:311K aosemi
aon6200.pdf
AON620030V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance. Conduction and RDS(ON) (at VGS=10V)
8.3. Size:236K aosemi
aon6202.pdf
AON620230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6202 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
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