AON6206 Specs and Replacement
Type Designator: AON6206
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.7 nS
Cossⓘ - Output Capacitance: 510 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: DFN5X6
AON6206 substitution
- MOSFET ⓘ Cross-Reference Search
AON6206 datasheet
aon6206.pdf
AON6206 30V N-Channel MOSFET General Description Product Summary VDS The AON6206 uses trench MOSFET technology that is 30V 24A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are ... See More ⇒
aon6204.pdf
AON6204 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒
aon6200.pdf
AON6200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance. Conduction and RDS(ON) (at VGS=10V) ... See More ⇒
aon6202.pdf
AON6202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AON6932, AON6934, AON6974, AON7202, AON7422L, AON7514, AON7702, AON6200, IRF1405, AON6408, AON6410, AON6414, AON6414AL, AON6418, AON6422, AON6454, AON6514
Keywords - AON6206 MOSFET specs
AON6206 cross reference
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AON6206 replacement
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History: AP10TN040P
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