2SK0615 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK0615
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   tonⓘ - Tiempo de encendido: 15 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: SC71

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2SK0615 Datasheet (PDF)

..1. Size:193K panasonic
2sk0615.pdf

Silicon MOS FETs (Small Signal)2SK0615 (2SK615)Silicon N-Channel MOS FETFor switchingUnit: mm Features Low ON-resistance 2.50.16.90.1(1.0)(1.5) High-speed switching(1.5) Allowing to be driven directly by CMOS and TTLR 0.9 M type package, allowing easy automatic and manual insertion asR 0.7well as stand-alone fixing to the printed circuit board. Absolute Max

9.1. Size:76K panasonic
2sk066400l.pdf

Silicon MOS FETs (Small Signal)2SK0664 (2SK664)Silicon N-Channel MOS FETunit: mm0.15+0.100.3+0.10.05For switching 0.03 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto-1 2matic insertion through the tape/magazine packing.(0.65) (0.65)1.30.12.00.210 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol R

9.2. Size:76K panasonic
2sk0664g0l.pdf

9.3. Size:107K panasonic
2sk0601.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK0601 (2SK601)Silicon N-channel MOSFETUnit: mmFor switching circuits4.50.11.60.2 1.50.1 Features Low drain-souce ON resistance RDS(on) High-speed switching Allowing to be driven directly by CMOS and TTL1 23 Mini-power type package, allowing downsizing of t

9.4. Size:220K panasonic
2sk066500l 2sk0665g0l.pdf

Silicon MOSFETs (Small Signal)2SK0665 (2SK665)Silicon N-channel MOSFETUnit: mmFor switching circuits0.15+0.100.3+0.10.050.03 Features High-speed switching Small drive current owing to high input inpedance1 2 High electrostatic breakdown voltage(0.65) (0.65)1.30.1 Absolute Maximum Ratings Ta = 25C2.00.2Parameter Symbol Rating Unit

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