2SK0615 - описание и поиск аналогов

Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit mm Features Low ON-resistance 2.5 0.1 6.9 0.1 (1.0) (1.5) High-speed switching (1.5) Allowing to be driven directly by CMOS and TTL R 0.9 M type package, allowing easy automatic and manual insertion as R 0.7 well as stand-alone fixing to the printed circuit board. Absolute Max

Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit mm 0.15+0.10 0.3+0.1 0.05 For switching 0.0 3 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto- 1 2 matic insertion through the tape/magazine packing. (0.65) (0.65) 1.3 0.1 2.0 0.2 10 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol R

Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit mm 0.15+0.10 0.3+0.1 0.05 For switching 0.0 3 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto- 1 2 matic insertion through the tape/magazine packing. (0.65) (0.65) 1.3 0.1 2.0 0.2 10 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol R

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit mm For switching circuits 4.5 0.1 1.6 0.2 1.5 0.1 Features Low drain-souce ON resistance RDS(on) High-speed switching Allowing to be driven directly by CMOS and TTL 1 23 Mini-power type package, allowing downsizing of t

Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET Unit mm For switching circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features High-speed switching Small drive current owing to high input inpedance 1 2 High electrostatic breakdown voltage (0.65) (0.65) 1.3 0.1 Absolute Maximum Ratings Ta = 25 C 2.0 0.2 Parameter Symbol Rating Unit