2SK1004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1004

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15 A

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 310* nS

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET 2SK1004

2SK1004 Datasheet (PDF)

1.1. 2sk1004.pdf Size:73K _update

4.1. 2sk1009-01.pdf Size:167K _update

4.2. 2sk1006.pdf Size:73K _update

4.3. 2sk1006-01m.pdf Size:127K _update

4.4. 2sk1007.pdf Size:61K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

4.5. 2sk1008.pdf Size:265K _update

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION ·Drain Current –I =4.5A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo

4.6. 2sk1001.pdf Size:125K _update

4.7. 2sk1008-01.pdf Size:133K _update

4.8. 2sk1005.pdf Size:73K _update

4.9. 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf Size:48K _no

4.10. 2sk1009.pdf Size:200K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1009 DESCRIPTION ·Drain Current –I =7A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

4.11. 2sk1007.pdf Size:201K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

4.12. 2sk1008.pdf Size:200K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION ·Drain Current –I =4.5A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

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