2SK3634 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3634TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1Features5.30+0.2 0.50+0.8-0.2 -0.7High voltage: VDSS = 200 VGate voltage rating: 30 V0.127RDS(on) =0.60 MAX. (VGS =10 V, ID =3.0 A)0.80+0.1 max-0.1Low Ciss: Ciss = 270 pF TYP. (VDS =10 V, VGS =0V)Built-in gate protection diode+0.12.3 0.60-0.1 1Gate4.60+

2SK3634www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3634DFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3634IFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi