2SK3634 - описание и поиск аналогов

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3634 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 Features 5.30+0.2 0.50+0.8 -0.2 -0.7 High voltage VDSS = 200 V Gate voltage rating 30 V 0.127 RDS(on) =0.60 MAX. (VGS =10 V, ID =3.0 A) 0.80+0.1 max -0.1 Low Ciss Ciss = 270 pF TYP. (VDS =10 V, VGS =0V) Built-in gate protection diode +0.1 2.3 0.60-0.1 1Gate 4.60+

2SK3634 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3634D FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3634I FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi