2SK2059S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2053N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2053 is an N-channel vertical MOS FET. Because it 5.7 0.1can be driven by a voltage as low as 1.5 V and it is not 2.0 0.2 1.5 0.1necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems su

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2054N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2054 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V.2.0 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is ideal f

FUJI POWER MOSFET2SK2051-L,SN-CHANNEL SILICON POWER MOSFETF-II SERIESFeatures Outline DrawingsHigh speed switchingT-Pack(L) T-Pack(S)Low on-resistanceNo secondary breakdown10+0.50.24.5Low driving power1.32High voltageVGS=30V Guarantee+0.20.2Applications1.2 0.10.80.4+0.2Switching regulators2.75.08UPS1. Gate2, 4. Drain DC-DC convert

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2055N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2055 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V.2.0 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is ideal f

Ordering number:ENN4315N-Channel Silicon MOSFET2SK2058Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2056A Low-voltage drive.[2SK2058]15.63.24.814.02.01.62.00.61.01 2 31 : Gate0.62 : Drain3 : Source5.45 5.45 SANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at

N-channel MOS-FET2SK2050F-III Series 100V 0,055 30A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

isc N-Channel MOSFET Transistor 2SK2052DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALU

isc N-Channel MOSFET Transistor 2SK2050DESCRIPTIONDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER V

isc N-Channel MOSFET Transistor 2SK2057DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2056 DESCRIPTION Drain Current ID= 4A@ TC=25 Drain Source Voltage- : VDSS= 800V(Min) Fast Switching Speed APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 80