2SK2059S - описание и поиск аналогов

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2053 N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK2053 is an N-channel vertical MOS FET. Because it 5.7 0.1 can be driven by a voltage as low as 1.5 V and it is not 2.0 0.2 1.5 0.1 necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems su

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2054 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2054 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 5.7 0.1 an IC operating at 5 V. 2.0 0.2 1.5 0.1 This product has a low ON resistance and superb switching characteristics and is ideal f

FUJI POWER MOSFET 2SK2051-L,S N-CHANNEL SILICON POWER MOSFET F-II SERIES Features Outline Drawings High speed switching T-Pack(L) T-Pack(S) Low on-resistance No secondary breakdown 10+0.5 0.2 4.5 Low driving power 1.32 High voltage VGS= 30V Guarantee +0.2 0.2 Applications 1.2 0.1 0.8 0.4+0.2 Switching regulators 2.7 5.08 UPS 1. Gate 2, 4. Drain DC-DC convert

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2055 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2055 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 5.7 0.1 an IC operating at 5 V. 2.0 0.2 1.5 0.1 This product has a low ON resistance and superb switching characteristics and is ideal f

Ordering number ENN4315 N-Channel Silicon MOSFET 2SK2058 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2056A Low-voltage drive. [2SK2058] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 Gate 0.6 2 Drain 3 Source 5.45 5.45 SANYO TO-3PB Specifications Absolute Maximum Ratings at

N-channel MOS-FET 2SK2050 F-III Series 100V 0,055 30A 80W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

isc N-Channel MOSFET Transistor 2SK2052 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor control DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALU

isc N-Channel MOSFET Transistor 2SK2050 DESCRIPTION Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor control DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER V

isc N-Channel MOSFET Transistor 2SK2057 DESCRIPTION Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2056 DESCRIPTION Drain Current ID= 4A@ TC=25 Drain Source Voltage- VDSS= 800V(Min) Fast Switching Speed APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 80