2SK2080-01R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2080-01R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 80 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 100 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Encapsulados: TO3PF
Búsqueda de reemplazo de 2SK2080-01R MOSFET
- Selecciónⓘ de transistores por parámetros
2SK2080-01R datasheet
4.1. Size:222K inchange semiconductor
2sk2080-01.pdf 
isc N-Channel MOSFET Transistor 2SK2080-01 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
7.1. Size:250K inchange semiconductor
2sk2080.pdf
isc N-Channel MOSFET Transistor 2SK2080 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
8.1. Size:85K 1
2sk2084stl-e.pdf
2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co
8.2. Size:305K toshiba
2sk208.pdf
2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Unit mm Condenser Microphone Applications High breakdown voltage VGDS = -50 V High input impedance I = -1.0 nA (max) (V = -30 V) GSS GS Low noise NF = 0.5dB (typ.) (R = 100 k , f = 120 Hz) G Small package. Maximum Ratings (Ta = =
8.3. Size:119K sanyo
2sk2083.pdf
Ordering number ENN4617 N-Channel Silicon MOSFET 2SK2083 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Micaless package facilitating mounting. [2SK2083] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO SMP-FD Specifications Absol
8.4. Size:88K renesas
2sk2084.pdf
2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co
8.5. Size:101K renesas
rej03g0995 2sk2084lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:99K renesas
2sk2084s-l.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. Size:219K fuji
2sk2082-01.pdf
N-channel MOS-FET 2SK2082-01 FAP-IIA Series 900V 1,4 9A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv
8.8. Size:218K fuji
2sk2081-01.pdf
FUJI POWER MOSFET 2SK2081-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC General purpose power amplifier EIAJ SC-65 Equivalent circuit schem
8.10. Size:222K inchange semiconductor
2sk2082-01.pdf
isc N-Channel MOSFET Transistor 2SK2082-01 DESCRIPTION Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.11. Size:222K inchange semiconductor
2sk2081-01.pdf
isc N-Channel MOSFET Transistor 2SK2081-01 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
Otros transistores... 2SK2044LS, 2SK2045, 2SK2045LS, 2SK2052-R, 2SK2054C, 2SK2057, 2SK2059L, 2SK2059S, K4145, 2SK2081-01, 2SK2082-01, 2SK2084S, 2SK2088, 2SK2089, 2SK319, 2SK3192, 2SK320
