Справочник MOSFET. 2SK2080-01R

 

2SK2080-01R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2080-01R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: TO3PF

 Аналог (замена) для 2SK2080-01R

 

 

2SK2080-01R Datasheet (PDF)

 ..1. Size:177K  fuji
2sk2080-01r.pdf

2SK2080-01R 2SK2080-01R

 4.1. Size:222K  inchange semiconductor
2sk2080-01.pdf

2SK2080-01R 2SK2080-01R

isc N-Channel MOSFET Transistor 2SK2080-01DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC ConvertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 7.1. Size:250K  inchange semiconductor
2sk2080.pdf

2SK2080-01R 2SK2080-01R

isc N-Channel MOSFET Transistor 2SK2080DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC ConvertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.1. Size:85K  1
2sk2084stl-e.pdf

2SK2080-01R 2SK2080-01R

2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co

 8.2. Size:305K  toshiba
2sk208.pdf

2SK2080-01R 2SK2080-01R

2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Unit: mm Condenser Microphone Applications High breakdown voltage: VGDS = -50 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low noise: NF = 0.5dB (typ.) (R = 100 k, f = 120 Hz) G Small package. Maximum Ratings (Ta ==

 8.3. Size:119K  sanyo
2sk2083.pdf

2SK2080-01R 2SK2080-01R

Ordering number:ENN4617N-Channel Silicon MOSFET2SK2083Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Micaless package facilitating mounting.[2SK2083]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMP-FDSpecificationsAbsol

 8.4. Size:88K  renesas
2sk2084.pdf

2SK2080-01R 2SK2080-01R

2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co

 8.5. Size:101K  renesas
rej03g0995 2sk2084lsds.pdf

2SK2080-01R 2SK2080-01R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:99K  renesas
2sk2084s-l.pdf

2SK2080-01R 2SK2080-01R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:219K  fuji
2sk2082-01.pdf

2SK2080-01R 2SK2080-01R

N-channel MOS-FET2SK2082-01FAP-IIA Series 900V 1,4 9A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

 8.8. Size:218K  fuji
2sk2081-01.pdf

2SK2080-01R 2SK2080-01R

FUJI POWER MOSFET2SK2081-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDECGeneral purpose power amplifierEIAJ SC-65Equivalent circuit schem

 8.9. Size:98K  no
2sk2088 2sk2089.pdf

2SK2080-01R 2SK2080-01R

 8.10. Size:222K  inchange semiconductor
2sk2082-01.pdf

2SK2080-01R 2SK2080-01R

isc N-Channel MOSFET Transistor 2SK2082-01DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC ConvertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.11. Size:222K  inchange semiconductor
2sk2081-01.pdf

2SK2080-01R 2SK2080-01R

isc N-Channel MOSFET Transistor 2SK2081-01DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC ConvertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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