2SK1601 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1601
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 3 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 25 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6.4 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de 2SK1601 MOSFET
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2SK1601 datasheet
..2. Size:215K inchange semiconductor
2sk1601.pdf 
isc N-Channel MOSFET Transistor 2SK1601 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX
8.3. Size:390K renesas
2sk160a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:36K panasonic
2sk1609.pdf
Power F-MOS FETs 2SK1609 2SK1609 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Abs
8.6. Size:36K panasonic
2sk1607.pdf
Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 5.45
8.7. Size:36K panasonic
2sk1608.pdf
Power F-MOS FETs 2SK1608 2SK1608 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Abs
8.10. Size:207K inchange semiconductor
2sk1606.pdf
isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
8.11. Size:207K inchange semiconductor
2sk1609.pdf
isc N-Channel MOSFET Transistor 2SK1609 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
8.12. Size:212K inchange semiconductor
2sk1603.pdf
isc N-Channel MOSFET Transistor 2SK1603 DESCRIPTION Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE M
8.13. Size:212K inchange semiconductor
2sk1602.pdf
isc N-Channel MOSFET Transistor 2SK1602 DESCRIPTION Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE M
8.14. Size:214K inchange semiconductor
2sk1600.pdf
isc N-Channel MOSFET Transistor 2SK1600 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX
8.15. Size:216K inchange semiconductor
2sk1607.pdf
isc N-Channel MOSFET Transistor 2SK1607 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX
8.16. Size:207K inchange semiconductor
2sk1608.pdf
isc N-Channel MOSFET Transistor 2SK1608 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
8.17. Size:207K inchange semiconductor
2sk1605.pdf
isc N-Channel MOSFET Transistor 2SK1605 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI
Otros transistores... 2SK1008, 2SK1008-01, 2SK1009-01, 2SK1010-01, 2SK1572, 2SK1574, 2SK1590C, 2SK1600, RFP50N06, 2SK1602, 2SK1603, 2SK160A, 2SK1626, 2SK1627, 2SK1629-E1-E, 2SK1660, 2SK1662M
