2SK1601 Todos los transistores

Introduzca al menos 3 números o letras

2SK1601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1601

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3 A

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 25 nS

Resistencia drenaje-fuente RDS(on): 6.4 Ohm

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de MOSFET 2SK1601

 

2SK1601 Datasheet (PDF)

1.1. 2sk1601.pdf Size:81K _update

2SK1601
2SK1601



4.1. 2sk1600.pdf Size:673K _update

2SK1601
2SK1601

查询2sk160供应商

4.2. 2sk1603.pdf Size:55K _update

2SK1601



 4.3. 2sk160a.pdf Size:390K _update

2SK1601
2SK1601

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. 2sk1602.pdf Size:673K _update

2SK1601
2SK1601



 4.5. 2sk1607.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS Unit : mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 5.45 0.3 0.6 0.

4.6. 2sk1606.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1606 2SK1606 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Abso

4.7. 2sk1609.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1609 2SK1609 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Absolute Maxim

4.8. 2sk1605.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1605 2SK1605 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Abso

4.9. 2sk1608.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1608 2SK1608 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Absolute Maxim

Otros transistores... 2SK1008 , 2SK1008-01 , 2SK1009-01 , 2SK1010-01 , 2SK1572 , 2SK1574 , 2SK1590C , 2SK1600 , IRF460 , 2SK1602 , 2SK1603 , 2SK160A , 2SK1626 , 2SK1627 , 2SK1629-E1-E , 2SK1660 , 2SK1662M .

Back to Top

 


2SK1601
  2SK1601
  2SK1601
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: PHX9NQ20T | PHX8NQ11T | PHX45NQ11T | PHX27NQ11T | PHX23NQ11T | PHX23NQ10T | PHX20N06T | PHX18NQ20T | PHX18NQ11T | PHX14NQ20T | PHW80NQ10T | PHW7N60 | PHU78NQ03LT | PHU77NQ03T | PHU66NQ03LT |

Introduzca al menos 1 números o letras

 

Back to Top