Справочник MOSFET. 2SK1601

 

2SK1601 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK1601

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 75 W

Предельно допустимое напряжение сток-исток (Uds): 900 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 3 A

Время нарастания (tr): 25 ns

Сопротивление сток-исток открытого транзистора (Rds): 6.4 Ohm

Тип корпуса: TO220AB

Аналог (замена) для 2SK1601

 

 

2SK1601 Datasheet (PDF)

1.1. 2sk1601.pdf Size:81K _update

2SK1601
2SK1601



4.1. 2sk1600.pdf Size:673K _update

2SK1601
2SK1601

查询2sk160供应商

4.2. 2sk1603.pdf Size:55K _update

2SK1601



 4.3. 2sk160a.pdf Size:390K _update

2SK1601
2SK1601

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. 2sk1602.pdf Size:673K _update

2SK1601
2SK1601



 4.5. 2sk1607.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS Unit : mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 5.45 0.3 0.6 0.

4.6. 2sk1606.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1606 2SK1606 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Abso

4.7. 2sk1609.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1609 2SK1609 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Absolute Maxim

4.8. 2sk1605.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1605 2SK1605 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Abso

4.9. 2sk1608.pdf Size:36K _panasonic

2SK1601
2SK1601

Power F-MOS FETs 2SK1608 2SK1608 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Absolute Maxim

Другие MOSFET... 2SK1008 , 2SK1008-01 , 2SK1009-01 , 2SK1010-01 , 2SK1572 , 2SK1574 , 2SK1590C , 2SK1600 , IRF460 , 2SK1602 , 2SK1603 , 2SK160A , 2SK1626 , 2SK1627 , 2SK1629-E1-E , 2SK1660 , 2SK1662M .

Back to Top

 


2SK1601
  2SK1601
  2SK1601
 

social 

Список транзисторов

Обновления

MOSFET: IRFP7718PBF | IRFP7537PBF | IRFP7530PBF | IRFP7430PBF | IRFP4868PBF | IRFP4768PBF | IRFP4710PBF | IRFP4668PBF | IRFP462 | IRFP460PBF | IRFP460P | IRFP460NPBF | IRFP460N | IRFP460LCPBF | IRFP460C |