2SK1603 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1603
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.4 Ohm
   Paquete / Cubierta: TO220IS

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2SK1603 Datasheet (PDF)

..1. Size:55K no
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..2. Size:212K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1603DESCRIPTIONDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M

8.1. Size:673K toshiba
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8.2. Size:673K toshiba
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2sk160

8.3. Size:390K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. Size:36K panasonic
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Power F-MOS FETs 2SK16062SK1606Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8

8.5. Size:36K panasonic
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Power F-MOS FETs 2SK16092SK1609Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)For high-frequency power amplification1.3 0.21.4 0.1+0.20.5 -0.1 Abs

8.6. Size:36K panasonic
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Power F-MOS FETs2SK1607Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.510.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1 0.15.45

8.7. Size:36K panasonic
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Power F-MOS FETs 2SK16082SK1608Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)For high-frequency power amplification1.3 0.21.4 0.1+0.20.5 -0.1 Abs

8.8. Size:36K panasonic
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Power F-MOS FETs 2SK16052SK1605Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8

8.9. Size:81K no
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8.10. Size:207K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1606DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

8.11. Size:207K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1609DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

8.12. Size:212K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1602DESCRIPTIONDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M

8.13. Size:214K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1600DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

8.14. Size:216K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1607DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

8.15. Size:207K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1608DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

8.16. Size:215K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1601DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

8.17. Size:207K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1605DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

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