2SK1603 - параметры транзистора MOSFET, его аналоги, datasheet

2SK1603 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: 2SK1603
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   trⓘ - Время нарастания: 25 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.4 Ohm
   Тип корпуса: TO220IS

Аналог (замена) для 2SK1603

- подбор MOSFET транзистора по параметрам

2SK1603 Datasheet (PDF)

..1. Size:55K no
2sk1603.pdf pdf_icon

..2. Size:212K inchange semiconductor
2sk1603.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1603DESCRIPTIONDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M

8.1. Size:673K toshiba
2sk1602.pdf pdf_icon

8.2. Size:673K toshiba
2sk1600.pdf pdf_icon

2sk160

8.3. Size:390K renesas
2sk160a.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. Size:36K panasonic
2sk1606.pdf pdf_icon

Power F-MOS FETs 2SK16062SK1606Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8

8.5. Size:36K panasonic
2sk1609.pdf pdf_icon

Power F-MOS FETs 2SK16092SK1609Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)For high-frequency power amplification1.3 0.21.4 0.1+0.20.5 -0.1 Abs

8.6. Size:36K panasonic
2sk1607.pdf pdf_icon

Power F-MOS FETs2SK1607Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.510.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1 0.15.45

8.7. Size:36K panasonic
2sk1608.pdf pdf_icon

Power F-MOS FETs 2SK16082SK1608Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)For high-frequency power amplification1.3 0.21.4 0.1+0.20.5 -0.1 Abs

8.8. Size:36K panasonic
2sk1605.pdf pdf_icon

Power F-MOS FETs 2SK16052SK1605Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8

8.9. Size:81K no
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8.10. Size:207K inchange semiconductor
2sk1606.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1606DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

8.11. Size:207K inchange semiconductor
2sk1609.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1609DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

8.12. Size:212K inchange semiconductor
2sk1602.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1602DESCRIPTIONDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M

8.13. Size:214K inchange semiconductor
2sk1600.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1600DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

8.14. Size:216K inchange semiconductor
2sk1607.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1607DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

8.15. Size:207K inchange semiconductor
2sk1608.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1608DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

8.16. Size:215K inchange semiconductor
2sk1601.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1601DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

8.17. Size:207K inchange semiconductor
2sk1605.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1605DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

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