2SK1739 Todos los transistores

 ..1. Size:126K  toshiba
 2sk1739.pdf

 0.1. Size:197K  toshiba
 2sk1739a.pdf

2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm Output Power Po 90 W (Min.) Drain Efficiency = 50% (Typ.) D Frequency f = 770 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 80 V Gate-Sourc

 8.1. Size:97K  sanyo
 2sk1730.pdf

Ordering number EN3825 N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK1730] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum

 8.2. Size:88K  sanyo
 2sk1738.pdf

Ordering number EN3833 N-Channel Silicon MOSFET 2SK1738 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SK1738] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 Meets radial taping. 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 8.3. Size:90K  sanyo
 2sk1737.pdf

Ordering number EN3832 N-Channel Silicon MOSFET 2SK1737 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SK1737] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 Meets radial taping. 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 8.4. Size:92K  sanyo
 2sk1736.pdf

Ordering number EN3831 N-Channel Silicon MOSFET 2SK1736 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK1736] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Pa

 8.5. Size:90K  sanyo
 2sk1731.pdf

Ordering number EN3826 N-Channel Silicon MOSFET 2SK1731 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SK1731] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANY

 8.6. Size:91K  sanyo
 2sk1733.pdf

Ordering number EN3828 N-Channel Silicon MOSFET 2SK1733 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK1733] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum

 8.7. Size:87K  sanyo
 2sk1735.pdf

Ordering number EN3830 N-Channel Silicon MOSFET 2SK1735 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SK1735] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANY

 8.8. Size:87K  sanyo
 2sk1734.pdf

Ordering number EN3829 N-Channel Silicon MOSFET 2SK1734 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SK1734] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 8.9. Size:86K  sanyo
 2sk1732.pdf

Ordering number EN3827 N-Channel Silicon MOSFET 2SK1732 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SK1732] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO