2SK1739 Specs and Replacement
Type Designator: 2SK1739
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: 2-22C1A
2SK1739 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1739 datasheet
2sk1739a.pdf
2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm Output Power Po 90 W (Min.) Drain Efficiency = 50% (Typ.) D Frequency f = 770 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 80 V Gate-Sourc... See More ⇒
2sk1730.pdf
Ordering number EN3825 N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK1730] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum... See More ⇒
2sk1738.pdf
Ordering number EN3833 N-Channel Silicon MOSFET 2SK1738 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SK1738] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 Meets radial taping. 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO... See More ⇒
Detailed specifications: 2SK2195 , 2SK2197 , 2SK17 , 2SK1717 , 2SK1719 , 2SK1720 , 2SK1721 , 2SK1722 , 60N06 , 2SK1746 , 2SK1748-Z , 2SK1750-Z , 2SK1751-Z , 2SK1766 , 2SK1767 , 2SK1768 , 2SK1769 .
Keywords - 2SK1739 MOSFET specs
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