2SK1333 Todos los transistores

 

2SK1333 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1333

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente |Vds|: 500 V

Corriente continua de drenaje |Id|: 15 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO3PL

Búsqueda de reemplazo de MOSFET 2SK1333

 

2SK1333 Datasheet (PDF)

0.1. 2sk1333.pdf Size:132K _no

2SK1333
2SK1333

8.1. 2sk1332.pdf Size:102K _sanyo

2SK1333
2SK1333

Ordering number:EN3137N-Channel Junction Silicon FET2SK1332Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Ideal for use in variable resistors, analog switches,unit:mmlow-frequency amplifiers, and constant-current2058circuits.[2SK1332]0.3Features0.153 Ultrasmall-sized package permitting 2SK1332-0 to 0.1applied sets to

8.2. 2sk1336.pdf Size:74K _renesas

2SK1333
2SK1333

2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 (Previous: ADE-208-1273) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 8.3. rej03g0936 2sk1339ds.pdf Size:96K _renesas

2SK1333
2SK1333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. 2sk1339.pdf Size:82K _renesas

2SK1333
2SK1333

2SK1339 Silicon N Channel MOS FET REJ03G0936-0200 (Previous: ADE-208-1276) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D

 8.5. 2sk1334.pdf Size:77K _renesas

2SK1333
2SK1333

2SK1334 Silicon N Channel MOS FET REJ03G0932-0200 (Previous: ADE-208-1271) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )

8.6. 2sk1338.pdf Size:81K _renesas

2SK1333
2SK1333

2SK1338 Silicon N Channel MOS FET REJ03G0935-0200 (Previous: ADE-208-1275) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)

8.7. rej03g0932 2sk1334ds.pdf Size:90K _renesas

2SK1333
2SK1333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.8. rej03g0935 2sk1338ds.pdf Size:95K _renesas

2SK1333
2SK1333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.9. 2sk1337.pdf Size:74K _renesas

2SK1333
2SK1333

2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 (Previous: ADE-208-1274) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

8.10. 2sk1331.pdf Size:137K _panasonic

2SK1333
2SK1333

8.11. 2sk133 2sk134 2sk135.pdf Size:189K _hitachi

2SK1333
2SK1333

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.12. 2sk1335l-s.pdf Size:591K _hitachi

2SK1333
2SK1333

8.13. 2sk1339.pdf Size:203K _inchange_semiconductor

2SK1333
2SK1333

isc N-Channel MOSFET Transistor 2SK1339DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

8.14. 2sk1330a.pdf Size:58K _inchange_semiconductor

2SK1333
2SK1333

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330A DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 900 V DSS VGS Gate-Source Voltag

8.15. 2sk1338.pdf Size:200K _inchange_semiconductor

2SK1333
2SK1333

isc N-Channel MOSFET Transistor 2SK1338DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela

8.16. 2sk1331.pdf Size:194K _inchange_semiconductor

2SK1333
2SK1333

isc N-Channel MOSFET Transistor 2SK1331DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITDrain-Source Voltage (V =0) 50

8.17. 2sk1330.pdf Size:58K _inchange_semiconductor

2SK1333
2SK1333

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 800 V DSS VGS Gate-Source Voltage

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