All MOSFET. 2SK1333 Datasheet

 

2SK1333 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1333

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 15 A

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO3PL

2SK1333 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1333 Datasheet (PDF)

1.1. 2sk1333.pdf Size:132K _update

2SK1333
2SK1333



4.1. 2sk1330a.pdf Size:58K _update

2SK1333
2SK1333

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330A DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 900 V DSS VGS Gate-Source Voltag

4.2. 2sk1331.pdf Size:137K _update

2SK1333
2SK1333



4.3. 2sk1330.pdf Size:58K _update

2SK1333
2SK1333

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 800 V DSS VGS Gate-Source Voltage

4.4. 2sk1332.pdf Size:102K _sanyo

2SK1333
2SK1333

Ordering number:EN3137 N-Channel Junction Silicon FET 2SK1332 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Ideal for use in variable resistors, analog switches, unit:mm low-frequency amplifiers, and constant-current 2058 circuits. [2SK1332] 0.3 Features 0.15 3 Ultrasmall-sized package permitting 2SK1332- 0 to 0.1 applied sets to be ma

4.5. rej03g0932 2sk1334ds.pdf Size:90K _renesas

2SK1333
2SK1333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. 2sk1337.pdf Size:74K _renesas

2SK1333
2SK1333

2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 (Previous: ADE-208-1274) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package cod

4.7. rej03g0936 2sk1339ds.pdf Size:96K _renesas

2SK1333
2SK1333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.8. 2sk1334.pdf Size:77K _renesas

2SK1333
2SK1333

2SK1334 Silicon N Channel MOS FET REJ03G0932-0200 (Previous: ADE-208-1271) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) D 1 2 1. Ga

4.9. rej03g0935 2sk1338ds.pdf Size:95K _renesas

2SK1333
2SK1333

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.10. 2sk1338.pdf Size:81K _renesas

2SK1333
2SK1333

2SK1338 Silicon N Channel MOS FET REJ03G0935-0200 (Previous: ADE-208-1275) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gat

4.11. 2sk1339.pdf Size:82K _renesas

2SK1333
2SK1333

2SK1339 Silicon N Channel MOS FET REJ03G0936-0200 (Previous: ADE-208-1276) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G

4.12. 2sk1336.pdf Size:74K _renesas

2SK1333
2SK1333

2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 (Previous: ADE-208-1273) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package cod

4.13. 2sk133 2sk134 2sk135.pdf Size:189K _hitachi

2SK1333
2SK1333

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.14. 2sk1335l-s.pdf Size:591K _hitachi

2SK1333
2SK1333



Datasheet: 2SK3044 , 2SK3045 , 2SK3046 , 2SK3047 , 2SK3048 , 2SK3049 , 2SK3050 , 2SK1331 , IRFB3306 , 2SK1344 , 2SK1345 , 2SK1346 , 2SK1347 , 2SK1348 , 2SK1349 , 2SK1350 , 2SK1351 .

 


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