IRF9520N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9520N  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO220AB

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IRF9520N datasheet

 ..1. Size:160K  international rectifier
 irf9520npbf.pdf pdf_icon

IRF9520N

PD - 95411 IRF9520NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.48 l P-Channel G l Fully Avalanche Rated ID = -6.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

 ..2. Size:95K  international rectifier
 irf9520n.pdf pdf_icon

IRF9520N

PD - 91521A IRF9520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.48 P-Channel G Fully Avalanche Rated ID = -6.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

 0.1. Size:155K  international rectifier
 irf9520ns.pdf pdf_icon

IRF9520N

PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 0.2. Size:155K  international rectifier
 irf9520nl.pdf pdf_icon

IRF9520N

PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

MOSTRAR MÁS

Otros transistores... IRF9240, IRF9410, IRF9510, IRF9510S, IRF9511, IRF9512, IRF9513, IRF9520, MMIS60R580P, IRF9520NL, IRF9520NS, IRF9521, IRF9522, IRF9523, IRF9530, IRF9530N, APT5015BLC