2SK2669 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2669
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 55 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de 2SK2669 MOSFET
2SK2669 Datasheet (PDF)
2sk2669.pdf

SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2669Case : TO-220(Unit : mm)( F5V90HVX2 )900V 5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
2sk2661.pdf

2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) 2SK2661 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancementmode : Vth = 2
2sk2662.pdf

2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
2sk2660.pdf

Power F-MOS FETs 2SK7582SK2660(Tentative)Silicon N-Channel Power F-MOSUnit : mm Features6.5 0.1 High-speed switching5.3 0.14.35 0.1 High drain-source voltage (VDSS)3.0 0.1 Applications High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)1 : Gate1 2 32 : DrainParameter Symbol Ratin
Otros transistores... 2SK1350 , 2SK1351 , 2SK1352 , 2SK1357 , 2SK2664 , 2SK2665 , 2SK2666 , 2SK2667 , SPP20N60C3 , 2SK2670 , 2SK2672 , 2SK2673 , 2SK2676 , 2SK2677 , 2SK356 , 2SK3570 , 2SK3571 .
History: SI9434BDY | 50N06AF | RJK1206JPD
History: SI9434BDY | 50N06AF | RJK1206JPD



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