2SK3571 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3571
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.5 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO220AB

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2SK3571 Datasheet (PDF)

..1. Size:82K 1
2sk3571 2sk3571-s 2sk3571-z 2sk3571-zk.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3571SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3571 TO-220ABdesigned for low voltage high current applications such asDC/DC converter with synchronous rectifier.2SK3571-S

..2. Size:44K kexin
2sk3571.pdf

SMD Type MOSFETMOS Field Effect Transistor2SK3571TO-263Unit: mm+0.24.57-0.2+0.11.27-0.1Features4.5V drive available.Low on-state resistance,RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.10.1max1.27-0.1Low gate charge+0.10.81-0.1QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A)2.541Gate+0.2Built-in gate protection diode2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22

..3. Size:290K inchange semiconductor
2sk3571.pdf

isc N-Channel MOSFET Transistor 2SK3571FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.1. Size:358K inchange semiconductor
2sk3571-zk.pdf

isc N-Channel MOSFET Transistor 2SK3571-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

0.2. Size:283K inchange semiconductor
2sk3571-s.pdf

isc N-Channel MOSFET Transistor 2SK3571-SFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.3. Size:358K inchange semiconductor
2sk3571-z.pdf

isc N-Channel MOSFET Transistor 2SK3571-ZFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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