2SK3571 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3571
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de 2SK3571 MOSFET
2SK3571 Datasheet (PDF)
2sk3571 2sk3571-s 2sk3571-z 2sk3571-zk.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3571SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3571 TO-220ABdesigned for low voltage high current applications such asDC/DC converter with synchronous rectifier.2SK3571-S
2sk3571.pdf

SMD Type MOSFETMOS Field Effect Transistor2SK3571TO-263Unit: mm+0.24.57-0.2+0.11.27-0.1Features4.5V drive available.Low on-state resistance,RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.10.1max1.27-0.1Low gate charge+0.10.81-0.1QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A)2.541Gate+0.2Built-in gate protection diode2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22
2sk3571.pdf

isc N-Channel MOSFET Transistor 2SK3571FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3571-zk.pdf

isc N-Channel MOSFET Transistor 2SK3571-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Otros transistores... 2SK2669 , 2SK2670 , 2SK2672 , 2SK2673 , 2SK2676 , 2SK2677 , 2SK356 , 2SK3570 , 4N60 , 2SK3572 , 2SK3573 , 2SK3573-S , 2SK3573-Z , 2SK3573-ZK , 2SK3574 , 2SK3575 , 2SK3575-S .
History: HY1210D | BF1208D | IRFI840GLCPBF | 2SK2793 | OSG60R022HT3ZF | TPM8205ATS6 | CJAC10TH10
History: HY1210D | BF1208D | IRFI840GLCPBF | 2SK2793 | OSG60R022HT3ZF | TPM8205ATS6 | CJAC10TH10



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc1815 | irfz44 | 2n5551 | irf540n | irf3205 mosfet | 2n3055 | irfp260n | 2n2222 datasheet