2SK3571 - параметры транзистора MOSFET, его аналоги, datasheet

2SK3571 Datasheet (PDF)

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2sk3571 2sk3571-s 2sk3571-z 2sk3571-zk.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3571SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3571 TO-220ABdesigned for low voltage high current applications such asDC/DC converter with synchronous rectifier.2SK3571-S

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SMD Type MOSFETMOS Field Effect Transistor2SK3571TO-263Unit: mm+0.24.57-0.2+0.11.27-0.1Features4.5V drive available.Low on-state resistance,RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.10.1max1.27-0.1Low gate charge+0.10.81-0.1QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A)2.541Gate+0.2Built-in gate protection diode2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22

..3. Size:290K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3571FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.1. Size:358K inchange semiconductor
2sk3571-zk.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3571-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno