2SK3572 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3572
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO220AB

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2SK3572 Datasheet (PDF)

..1. Size:80K 1
2sk3572 2sk3572-s 2sk3572-z 2sk3572-zk.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3572SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3572 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3572 TO-220ABdesigned for low voltage high current applications such as2SK3572-S TO-262DC/DC converter with synchronous

..2. Size:45K kexin
2sk3572.pdf

SMD Type MOSFETMOS Field Effect Transistor2SK3572TO-263Unit: mm+0.24.57-0.2+0.1Features 1.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A)+0.10.1max1.27-0.1Low gate charge+0.10.81-0.1QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A)2.541GateBuilt-in gate protection diode +0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2

..3. Size:289K inchange semiconductor
2sk3572.pdf

isc N-Channel MOSFET Transistor 2SK3572FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.1. Size:283K inchange semiconductor
2sk3572-s.pdf

isc N-Channel MOSFET Transistor 2SK3572-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

0.2. Size:357K inchange semiconductor
2sk3572-z.pdf

isc N-Channel MOSFET Transistor 2SK3572-ZFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

0.3. Size:357K inchange semiconductor
2sk3572-zk.pdf

isc N-Channel MOSFET Transistor 2SK3572-ZKFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

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