2SK3573-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3573-Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 105 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 83 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.5 V
Qgⓘ - Carga de la puerta: 68 nC
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 1550 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO263
- Selección de transistores por parámetros
2SK3573-Z Datasheet (PDF)
2sk3573-z.pdf

isc N-Channel MOSFET Transistor 2SK3573-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3573-zk.pdf

isc N-Channel MOSFET Transistor 2SK3573-ZKFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3573-s-z-zk.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3573SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3573 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3573 TO-220ABdesigned for low voltage high current applications such as2SK3573-S TO-262DC/DC converter with synchronous
2sk3573-s.pdf

isc N-Channel MOSFET Transistor 2SK3573-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: TN2404K | FDD13AN06A0-F085 | 2SK2890-01 | IRHMK57260SE | SRM7N60
History: TN2404K | FDD13AN06A0-F085 | 2SK2890-01 | IRHMK57260SE | SRM7N60



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