2SK3573-Z MOSFET Datasheet: N-Ch, 20V, 83A. Full specification with pinout and replacement list

2SK3573-Z Specs and Replacement

Type Designator: 2SK3573-Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 83 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 1550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

2SK3573-Z substitution

- MOSFET ⓘ Cross-Reference Search

2SK3573-Z datasheet

..1. Size:357K inchange semiconductor
2sk3573-z.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3573-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

0.1. Size:357K inchange semiconductor
2sk3573-zk.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3573-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

6.1. Size:74K nec
2sk3573-s-z-zk.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3573 TO-220AB designed for low voltage high current applications such as 2SK3573-S TO-262 DC/DC converter with synchronous ... See More ⇒

6.2. Size:283K inchange semiconductor
2sk3573-s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3573-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

Detailed specifications: 2SK2676, 2SK2677, 2SK356, 2SK3570, 2SK3571, 2SK3572, 2SK3573, 2SK3573-S, AON6380, 2SK3573-ZK, 2SK3574, 2SK3575, 2SK3575-S, 2SK3575-Z, 2SK3575-ZK, 2SK3576, 2SK3577