2SK3575-S Todos los transistores

 

2SK3575-S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3575-S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 105 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 83 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 1430 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO262

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2SK3575-S datasheet

 ..1. Size:283K  inchange semiconductor
2sk3575-s.pdf pdf_icon

2SK3575-S

isc N-Channel MOSFET Transistor 2SK3575-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 0.1. Size:213K  renesas
2sk3575-s-z-zk.pdf pdf_icon

2SK3575-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:357K  inchange semiconductor
2sk3575-zk.pdf pdf_icon

2SK3575-S

isc N-Channel MOSFET Transistor 2SK3575-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 6.2. Size:357K  inchange semiconductor
2sk3575-z.pdf pdf_icon

2SK3575-S

isc N-Channel MOSFET Transistor 2SK3575-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

Otros transistores... 2SK3571 , 2SK3572 , 2SK3573 , 2SK3573-S , 2SK3573-Z , 2SK3573-ZK , 2SK3574 , 2SK3575 , AON7506 , 2SK3575-Z , 2SK3575-ZK , 2SK3576 , 2SK3577 , 2SK358 , 2SK4178-ZK , 2SK4181-TL-E , 2SK4184-ZK .

History: WMP11N65SR | 2SK1314S | SLD2N65UZ | WML12N105C2 | DH020N03B | WML125N12LG2

 

 

 

 

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