2SK3575-S
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3575-S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 105
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 83
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 70
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 1430
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
TO262
2SK3575-S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3575-S
Datasheet (PDF)
..1. Size:283K inchange semiconductor
2sk3575-s.pdf
isc N-Channel MOSFET Transistor 2SK3575-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
0.1. Size:213K renesas
2sk3575-s-z-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
6.1. Size:357K inchange semiconductor
2sk3575-zk.pdf
isc N-Channel MOSFET Transistor 2SK3575-ZKFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
6.2. Size:357K inchange semiconductor
2sk3575-z.pdf
isc N-Channel MOSFET Transistor 2SK3575-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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