2SK4202-S19-AY Todos los transistores

 ..1. Size:297K  renesas
 2sk4202-s19-ay.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:288K  inchange semiconductor
 2sk4202.pdf

isc N-Channel MOSFET Transistor 2SK4202 FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.1. Size:272K  1
 2sk4204ls.pdf

2SK4204LS Ordering number ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4204LS Applications Features 4V drive. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 V Gate-to-Source Voltage VGSS 20 V Drain Cur

 8.2. Size:273K  1
 2sk4203ls.pdf

2SK4203LS Ordering number ENA1289 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4203LS Applications Features 4V drive. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 V Gate-to-Source Voltage VGSS 20 V Drain Cur

 8.3. Size:208K  toshiba
 2sk4207.pdf

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4207 Swiching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON-resistance RDS (ON) = 0.78 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID

 8.4. Size:496K  sanyo
 2sk4209.pdf

2SK4209 Ordering number ENA1516 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4209 Applications Features Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit D

 8.5. Size:272K  sanyo
 2sk4200ls.pdf

2SK4200LS Ordering number ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4200LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 8.6. Size:291K  renesas
 2sk4201-s19-ay.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:288K  inchange semiconductor
 2sk4201.pdf

isc N-Channel MOSFET Transistor 2SK4201 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.8. Size:282K  inchange semiconductor
 2sk4207.pdf

iscN-Channel MOSFET Transistor 2SK4207 FEATURES Low drain-source on-resistance RDS(ON) = 0.95 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 8.9. Size:279K  inchange semiconductor
 2sk4204ls.pdf

isc N-Channel MOSFET Transistor 2SK4204LS FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 45V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.10. Size:280K  inchange semiconductor
 2sk4203ls.pdf

isc N-Channel MOSFET Transistor 2SK4203LS FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 45V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.11. Size:279K  inchange semiconductor
 2sk4200ls.pdf

isc N-Channel MOSFET Transistor 2SK4200LS FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 2.73 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol