2SK4202-S19-AY Datasheet and Replacement

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK4202FEATURESDrain Current : I = 84A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

2SK4204LSOrdering number : ENA1290SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4204LSApplicationsFeatures 4V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGSS 20 VDrain Cur

2SK4203LSOrdering number : ENA1289SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4203LSApplicationsFeatures 4V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGSS 20 VDrain Cur

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK4207 Swiching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 0.78 (typ.) High forward transfer admittance:|Yfs| = 11 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID

2SK4209Ordering number : ENA1516SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4209ApplicationsFeatures Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitD

2SK4200LSOrdering number : ENA1333SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4200LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK4201FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

iscN-Channel MOSFET Transistor 2SK4207FEATURESLow drain-source on-resistance:RDS(ON) = 0.95 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc N-Channel MOSFET Transistor 2SK4204LSFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 45V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK4203LSFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 45V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK4200LSFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 2.73(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol