2SK4004-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK4004-01MR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 5.6 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET 2SK4004-01MR

2SK4004-01MR Datasheet (PDF)

..1. Size:280K inchange semiconductor
2sk4004-01mr.pdf

isc N-Channel MOSFET Transistor 2SK4004-01MRFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

8.1. Size:742K toshiba
2sk4002.pdf

2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 4.2 (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = 100 A (max)

8.2. Size:173K toshiba
2sk4003.pdf

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 1.7 (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS =

8.3. Size:442K fuji
2sk4006-01s-l-sj.pdf

SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK4006-01L,S,SJSpec. No. :MS5F6095Date :Apr.-11-2005Fuji Electric Device Technology Co.,Ltd.Matsumoto FactoryNAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWNApr.-11-'05CHECKEDApr.-11-'05MS5F6095 1 / 21CHECKEDApr.-11-'05H04-004-05This datasheet has been downloaded from http://www.digchip.com

8.4. Size:200K hitachi
2sk400.pdf

8.5. Size:279K inchange semiconductor
2sk4005-01mr.pdf

isc N-Channel MOSFET Transistor 2SK4005-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

8.6. Size:354K inchange semiconductor
2sk4002.pdf

isc N-Channel MOSFET Transistor 2SK4002FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.7. Size:354K inchange semiconductor
2sk4003.pdf

isc N-Channel MOSFET Transistor 2SK4003FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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