2SK4004-01MR
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK4004-01MR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5.6
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85
Ohm
Package:
TO220F
2SK4004-01MR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK4004-01MR
Datasheet (PDF)
..1. Size:280K inchange semiconductor
2sk4004-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK4004-01MRFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
8.1. Size:742K toshiba
2sk4002.pdf
2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 4.2 (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = 100 A (max)
8.2. Size:173K toshiba
2sk4003.pdf
2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 1.7 (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS =
8.3. Size:442K fuji
2sk4006-01s-l-sj.pdf
SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK4006-01L,S,SJSpec. No. :MS5F6095Date :Apr.-11-2005Fuji Electric Device Technology Co.,Ltd.Matsumoto FactoryNAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWNApr.-11-'05CHECKEDApr.-11-'05MS5F6095 1 / 21CHECKEDApr.-11-'05H04-004-05This datasheet has been downloaded from http://www.digchip.com
8.5. Size:279K inchange semiconductor
2sk4005-01mr.pdf
isc N-Channel MOSFET Transistor 2SK4005-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
8.6. Size:354K inchange semiconductor
2sk4002.pdf
isc N-Channel MOSFET Transistor 2SK4002FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.7. Size:354K inchange semiconductor
2sk4003.pdf
isc N-Channel MOSFET Transistor 2SK4003FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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