2SK4005-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK4005-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 4.2 (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = 100 A (max)

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 1.7 (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS =

SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK4006-01L,S,SJSpec. No. :MS5F6095Date :Apr.-11-2005Fuji Electric Device Technology Co.,Ltd.Matsumoto FactoryNAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWNApr.-11-'05CHECKEDApr.-11-'05MS5F6095 1 / 21CHECKEDApr.-11-'05H04-004-05This datasheet has been downloaded from http://www.digchip.com

isc N-Channel MOSFET Transistor 2SK4002FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK4004-01MRFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

isc N-Channel MOSFET Transistor 2SK4003FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno