Справочник MOSFET. 2SK4005-01MR

 

2SK4005-01MR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK4005-01MR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.6 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 2SK4005-01MR

 

 

2SK4005-01MR Datasheet (PDF)

 ..1. Size:279K  inchange semiconductor
 2sk4005-01mr.pdf

2SK4005-01MR 2SK4005-01MR

isc N-Channel MOSFET Transistor 2SK4005-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.1. Size:742K  toshiba
 2sk4002.pdf

2SK4005-01MR 2SK4005-01MR

2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 4.2 (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = 100 A (max)

 8.2. Size:173K  toshiba
 2sk4003.pdf

2SK4005-01MR 2SK4005-01MR

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 1.7 (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS =

 8.3. Size:442K  fuji
 2sk4006-01s-l-sj.pdf

2SK4005-01MR 2SK4005-01MR

SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK4006-01L,S,SJSpec. No. :MS5F6095Date :Apr.-11-2005Fuji Electric Device Technology Co.,Ltd.Matsumoto FactoryNAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWNApr.-11-'05CHECKEDApr.-11-'05MS5F6095 1 / 21CHECKEDApr.-11-'05H04-004-05This datasheet has been downloaded from http://www.digchip.com

 8.4. Size:200K  hitachi
 2sk400.pdf

2SK4005-01MR 2SK4005-01MR

 8.5. Size:354K  inchange semiconductor
 2sk4002.pdf

2SK4005-01MR 2SK4005-01MR

isc N-Channel MOSFET Transistor 2SK4002FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.6. Size:280K  inchange semiconductor
 2sk4004-01mr.pdf

2SK4005-01MR 2SK4005-01MR

isc N-Channel MOSFET Transistor 2SK4004-01MRFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 8.7. Size:354K  inchange semiconductor
 2sk4003.pdf

2SK4005-01MR 2SK4005-01MR

isc N-Channel MOSFET Transistor 2SK4003FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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