2SK1113 Datasheet. Equivalente

 ..1. Size:85K  toshiba
 2sk1113.pdf

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 8.1. Size:78K  toshiba
 2sk1115.pdf

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 8.2. Size:55K  toshiba
 2sk1116.pdf

 8.3. Size:203K  toshiba
 2sk1112.pdf

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 8.4. Size:395K  toshiba
 2sk1119.pdf

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (V = 10 V, I = 1

 8.5. Size:194K  toshiba
 2sk1118.pdf

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 8.6. Size:55K  no
 2sk1117.pdf

 8.7. Size:132K  no
 2sk1114.pdf

 8.8. Size:261K  inchange semiconductor
 2sk1117.pdf

isc N-Channel MOSFET Transistor 2SK1117 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.9. Size:260K  inchange semiconductor
 2sk1115.pdf

isc N-Channel MOSFET Transistor 2SK1115 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.10. Size:261K  inchange semiconductor
 2sk1114.pdf

isc N-Channel MOSFET Transistor 2SK1114 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.11. Size:261K  inchange semiconductor
 2sk1116.pdf

isc N-Channel MOSFET Transistor 2SK1116 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 58m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.12. Size:262K  inchange semiconductor
 2sk1119.pdf

isc N-Channel MOSFET Transistor 2SK1119 FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 3.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 8.13. Size:250K  inchange semiconductor
 2sk1118.pdf

isc N-Channel MOSFET Transistor 2SK1118 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela