2SK1113 Todos los transistores

 

2SK1113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1113

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 120 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6 nS

Conductancia de drenaje-sustrato (Cd): 155 pF

Resistencia drenaje-fuente RDS(on): 0.42 Ohm

Empaquetado / Estuche: TO251

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2SK1113 Datasheet (PDF)

1.1. 2sk1113.pdf Size:85K _update

2SK1113
2SK1113

4.1. 2sk1112.pdf Size:203K _update

2SK1113
2SK1113

4.2. 2sk1114.pdf Size:132K _update

2SK1113
2SK1113



 4.3. 2sk1115.pdf Size:78K _update

2SK1113
2SK1113

4.4. 2sk1116.pdf Size:55K _update

2SK1113
2SK1113



 4.5. 2sk1119.pdf Size:395K _toshiba

2SK1113
2SK1113

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 µA (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1 mA)

4.6. 2sk1118.pdf Size:194K _toshiba

2SK1113
2SK1113

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.7. 2sk1117.pdf Size:55K _no

2SK1113
2SK1113

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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