2SK1113 Specs and Replacement
Type Designator: 2SK1113
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ -
Output Capacitance: 155 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO251
- MOSFET ⓘ Cross-Reference Search
2SK1113 datasheet
8.1. Size:78K toshiba
2sk1115.pdf 
Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/ ... See More ⇒
8.3. Size:203K toshiba
2sk1112.pdf 
Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 ... See More ⇒
8.4. Size:395K toshiba
2sk1119.pdf 
2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (V = 10 V, I = 1 ... See More ⇒
8.5. Size:194K toshiba
2sk1118.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.8. Size:261K inchange semiconductor
2sk1117.pdf 
isc N-Channel MOSFET Transistor 2SK1117 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
8.9. Size:260K inchange semiconductor
2sk1115.pdf 
isc N-Channel MOSFET Transistor 2SK1115 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
8.10. Size:261K inchange semiconductor
2sk1114.pdf 
isc N-Channel MOSFET Transistor 2SK1114 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
8.11. Size:261K inchange semiconductor
2sk1116.pdf 
isc N-Channel MOSFET Transistor 2SK1116 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 58m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
8.12. Size:262K inchange semiconductor
2sk1119.pdf 
isc N-Channel MOSFET Transistor 2SK1119 FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 3.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
8.13. Size:250K inchange semiconductor
2sk1118.pdf 
isc N-Channel MOSFET Transistor 2SK1118 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela... See More ⇒
Detailed specifications: 2SK4213-ZK, 2SK4178-S27-AY, 2SK4004-01MR, 2SK4005-01MR, 2SK4006-01L, 2SK4006-01S, 2SK4006-01SJ, 2SK1112, 8N60, 2SK1114, 2SK1115, 2SK1116, 2SK1124, 2SK113R, 2SK113O, 2SK113Y, 2SK1159
Keywords - 2SK1113 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.