IRF9530N Todos los transistores

 

IRF9530N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9530N
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO220AB
 

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IRF9530N datasheet

 ..1. Size:225K  international rectifier
 irf9530npbf.pdf pdf_icon

IRF9530N

IRF9530NPbF l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175 C Operating Temperature l Fast Switching DS(on) l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description

 ..2. Size:113K  international rectifier
 irf9530n.pdf pdf_icon

IRF9530N

PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are

 ..3. Size:1531K  cn vbsemi
 irf9530npbf.pdf pdf_icon

IRF9530N

IRF9530NPBF www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Swi

 ..4. Size:241K  inchange semiconductor
 irf9530n.pdf pdf_icon

IRF9530N

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N FEATURES Static drain-source on-resistance RDS(on) 0.2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and relia

MOSTRAR MÁS

Otros transistores... IRF9520 , IRF9520N , IRF9520NL , IRF9520NS , IRF9521 , IRF9522 , IRF9523 , IRF9530 , IRFZ44N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 , IRF9540N .

 

 

 


 
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