IRF9530N
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9530N
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 79
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 14
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 58(max)
nC
trⓘ -
Время нарастания: 58
ns
Cossⓘ - Выходная емкость: 260
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2
Ohm
Тип корпуса:
TO220AB
Аналог (замена) для IRF9530N
IRF9530N
Datasheet (PDF)
..1. Size:225K international rectifier
irf9530npbf.pdf 
IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription
..2. Size:113K international rectifier
irf9530n.pdf 
PD - 91482CIRF9530NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 P-ChannelG Fully Avalanche RatedID = -14ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
..3. Size:225K infineon
irf9530npbf.pdf 
IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription
..4. Size:1531K cn vbsemi
irf9530npbf.pdf 
IRF9530NPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Swi
..5. Size:241K inchange semiconductor
irf9530n.pdf 
isc P-Channel MOSFET Transistor IRF9530N,IIRF9530NFEATURESStatic drain-source on-resistance:RDS(on)0.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
0.1. Size:173K international rectifier
irf9530ns.pdf 
PD - 91523AIRF9530NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9530NS)VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG P-ChannelID = -14A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi
0.2. Size:761K international rectifier
irf9530nspbf.pdf 
PD- 95439IRF9530NSPbFIRF9530NLPbF Lead-Freewww.irf.com 104/26/05IRF9530NS/LPbF2 www.irf.comIRF9530NS/LPbFwww.irf.com 3IRF9530NS/LPbF4 www.irf.comIRF9530NS/LPbFwww.irf.com 5IRF9530NS/LPbF6 www.irf.comIRF9530NS/LPbFwww.irf.com 7IRF9530NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.3. Size:817K infineon
irf9530nspbf irf9530nlpbf.pdf 
IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In
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